(PR) Toshiba Unveils 256 Gigabit 48-layer 3D TLC NAND Chip

Toshiba Corporation today unveiled the new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory. The new device is the world's first 256-gigabit (32gigabytes) 48-layer BiCS device and also deploys industry-leading 3-bit-per-cell (triple-level cell, TLC) technology. Sample shipments will start in September.

BiCS FLASH is based on a leading-edge 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND Flash memory while enhancing write/erase reliability endurance and boosting write speeds. The new 256 Gb device is suited for diverse applications, including consumer SSD, smartphones, tablets and memory cards, and enterprise SSD for data centers.

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